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SE03N6L01GZ ESD Array Low Capacitance ESD Protection Operating Voltage 3.3V

10000PCS
MOQ
Negotiable
Price
SE03N6L01GZ ESD Array Low Capacitance ESD Protection Operating Voltage 3.3V
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Features
Specifications
Component Name: ESD Arrays
Component Package: DFN1006-2L
Vrwm (Max.): 3.3V
Vbr (Min.): 5.0V
Vbr (Max.): 6.5V
It: 1mA
Ir (Max.): 1.0μA
Vc (Typ.) (Ipp=1A): 9.0V
Vc (Typ.) (Ipp=5A): 19.0V
Cj (Typ.): 0.4pF
Highlight:

ESD Array 3.3V

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Low Capacitance ESD Array

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Low Capacitance ESD Protection

Basic Infomation
Place of Origin: Shenzhen Guangdong China
Brand Name: SOCAY
Certification: REACH RoHS ISO
Model Number: SE03N6L01GZ
Payment & Shipping Terms
Delivery Time: 5-8 work days
Product Description

Low Capacitance ESD Arrays for ESD Protection SE03N6L01GZ Operating Voltage 3.3V

 
ESD Arrays DATASHEET:  SE03N6L01GZ_v2204.1.pdf
 
 
ESD Arrays Features:

  • Operating Voltage: 3.3V
  • Low Leakage: nA Level
  • Low Capacitance
  • Extremely-Low Clamping Voltage
  • RoHS compliant

 

ESD Arrays Applications:

  • Cellular Handsets & Accessories
  • Digital Visual Interface (DVI)
  • RF Circuits
  • Display Port
  • USB Ports
  • MDDI Ports
  • PCI Express

 

ESD Arrays Mechanical Characteristics:

  • DFN1006 (1.0x0.6x0.5mm) Package
  • Weight 0.5 Milligrams (Approximate)
  • Quantity Per Reel : 10,000pcs
  • Reel Size : 7 inch
  • Lead Finish : Lead Free

 

ESD Arrays Functional Diagram:

SE03N6L01GZ ESD Array Low Capacitance ESD Protection Operating Voltage 3.3V 0

 

 

ESD Arrays Absolute Maximum Ratings (TA=25℃ unless otherwise specified):

 
Symbol Parameter Value Units
TL Lead Soldering Temperature 260 (10sec) ºC
TOP Operating Temperature Range -55 to +125
TSTG Storage Temperature Range -55 to +150
VESD ESD per IEC61000-4-2 (Air) ±25 kV
  ESD per IEC61000-4-2 (Contact) ±25  

 

 

 

Electrical Characteristics (TA = 25℃ unless otherwise specified):

Parameter Symbol Conditions Min. Typ. Max. Units
Reverse Working Voltage VRWM -- -- -- 3.3 V
Breakdown Voltage VBR IT = 1mA 5.0 -- 6.5 V
Leakage Current IR VRWM = 3.3V -- -- 1.0 μA
Clamping Voltage VC IPP = 1A ,tP = 8/20μs -- 9.0 -- V
Clamping Voltage VC IPP = 5A , tP = 8/20μs -- 19.0 -- V
Junction Capacitance CJ VR = 0V, f = 1MHz -- 0.4 -- pF

 

 

 

ESD Arrays Characteristic Curves:

Fig1. 8/20 us Pulse Waveform

SE03N6L01GZ ESD Array Low Capacitance ESD Protection Operating Voltage 3.3V 1

 

Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)

SE03N6L01GZ ESD Array Low Capacitance ESD Protection Operating Voltage 3.3V 2

 

DFN1006-2L Package Outline & Dimensions:

Symbol Millimeters Inches
  Min. Max. Min. Max.
A 0.450 0.550 0.018 0.022
A1 0.010 0.070 0.000 0.003
D 0.950 1.050 0.037 0.041
E 0.550 0.650 0.022 0.026
D1 0.450 REF 0.018 REF
E1 0.400 REF 0.016 REF
b 0.275 0.325 0.011 0.013
e 0.675 0.725 0.027 0.029
L 0.275 0.325 0.011 0.013
L1 0.010 REF 0.000 REF

 

SE03N6L01GZ ESD Array Low Capacitance ESD Protection Operating Voltage 3.3V 3

 

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Contact Person : Sun
Tel : +8618126201429
Fax : 86-755-88362681
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